vishay tlhg / r / y460. document number 83007 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19220 high efficiency led, ? 3 mm tinted total diffused package description the tlh.46.. series was developed for applications which need a very wide radiation angle like backlight- ing, general indicating and lighting purposes. it is housed in a 3 mm tinted total diffused plastic package. the wide viewing angle of these devices provides a high on-off contrast. several selection types with different luminous inten- sities are offered. all leds are categorized in lumi- nous intensity groups. the green and yellow leds are categorized additionally in wavelength groups. that allows users to assemble leds with uniform appearance. features ? choice of three bright colors standard t-1 package small mechanical tolerances suitable for dc and high peak current very wide viewing angle luminous intensity categorized yellow and green color categorized lead-free device applications status lights off / on indicator background illumination readout lights maintenance lights legend light parts table part color, luminous intensity angle of half intensity ( ? ) technology TLHR4600 red, i v > 1 mcd 60 gaasp on gap tlhr4601 red, i v > 1.6 mcd 60 gaasp on gap tlhr4605 red, i v > 2.5 mcd 60 gaasp on gap tlhy4600 yellow, i v > 0.63 mcd 60 gaasp on gap tlhy4601 yellow, i v > 1 mcd 60 gaasp on gap tlhy4605 yellow, i v > 2.5 mcd 60 gaasp on gap tlhg4600 green, i v > 1 mcd 60 gap on gap tlhg4601 green, i v > 1.6 mcd 60 gap on gap tlhg4605 green, i v > 4 mcd 60 gap on gap
www.vishay.com 2 document number 83007 rev. 1.4, 31-aug-04 vishay tlhg / r / y460. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlhr46.. , tlhy46.. , tlhg46.. , optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlhr46.. 1) in one packing unit i vmin /i vmax 0.5 yellow tlhy46.. 1) in one packing unit i vmin /i vmax 0.5 parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 si fsm 1a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 20 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma TLHR4600 i v 12 mcd tlhr4601 i v 1.6 3.5 mcd tlhr4605 i v 2.5 6 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 23v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma tlhy4600 i v 0.63 2 mcd tlhy4601 i v 13.5 mcd tlhy4605 i v 2.5 5 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
vishay tlhg / r / y460. document number 83007 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 green tlhg46.. 1) in one packing unit i vmin /i vmax 0.5 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma tlhg4600 i v 12 mcd tlhg4601 i v 1.6 3.5 mcd tlhg4605 i v 46 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature for ingan 100 80 60 40 0 25 50 75 100 125 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 95 10904 20 0 0 10 20 30 40 60 i - forward current ( ma) f 95 10905 50 t amb - ambient temperature ( c) 100 80 60 40 20 0 figure 3. forward current vs. pulse length figure 4. rel. luminous intensity vs. angular displacement 0.02 0.05 0.1 0.2 1 0.5 t p /t= 0.01 t amb 65 c 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 10047 i - forward current ( ma ) f 0.4 0.2 0 0.2 0.4 0.6 95 10043 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel
www.vishay.com 4 document number 83007 rev. 1.4, 31-aug-04 vishay tlhg / r / y460. vishay semiconductors figure 5. forward current vs. forward voltage figure 6. rel. luminous intensity vs. ambient temperature figure 7. rel. lumin. intensity vs. forw. current/duty cycle red t p /t = 0.001 t p =10 s 0.1 1 10 100 1000 95 10026 v f - forward voltag e(v) i - forward current ( ma ) f 10 8 6 4 2 0 0 0 0.4 0.8 1.2 1.6 95 10027 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) i f =10ma red 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 red i - relative luminous intensity vre l figure 8. relative luminous intensity vs. forward current figure 9. relative intensity vs. wavelength figure 10. forward current vs. forward voltage 0.01 0.1 1 10 i f - forward current ( ma ) 100 10 95 10029 i - relative luminous intensity v rel red 1 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 - wavelength ( nm ) 1.0 red i - relative luminous intensity vre l 0.1 1 10 100 1000 10 8 6 4 2 0 95 10030 v f - forward voltag e(v) i - forward current ( ma ) f yellow t p /t = 0.001 t p =10 s
vishay tlhg / r / y460. document number 83007 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 11. rel. luminous intensity vs. ambient temperature figure 12. rel. lumin. intensity vs. forw. current/duty cycle figure 13. relative luminous intensity vs. forward current 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) yellow i f =10ma yellow 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 yellow i f - forward current ( ma ) 100 0.1 1 10 95 10033 i - relative luminous intensity v rel 10 1 0.01 figure 14. relative intensity vs. wavelength figure 15. forward current vs. forward voltage figure 16. rel. luminous intensity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - forward voltag e(v) i - forward current ( ma ) f green t p /t = 0.001 t p =10 s 0 0.4 0.8 1.2 1.6 95 10035 i - relative luminous intensity v rel green i f =10ma t amb - ambient temperature ( c) 20 40 60 80 0 100
www.vishay.com 6 document number 83007 rev. 1.4, 31-aug-04 vishay tlhg / r / y460. vishay semiconductors figure 17. rel. lumin. intensity vs. forw. current/duty cycle figure 18. relative luminous intensity vs. forward current figure 19. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 16486 500 v rel 2.0 green i ? specific luminous intensity 1 0.5 0.2 0.1 0.05 0.02 t p /t i f /ma i f - forward current ( ma ) 100 green 0.1 1 10 95 10037 i - relative luminous intensity v rel 10 1 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel
vishay tlhg / r / y460. document number 83007 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 7 package dimensions in mm 95 10913
www.vishay.com 8 document number 83007 rev. 1.4, 31-aug-04 vishay tlhg / r / y460. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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